{"product_id":"high-voltage-sic-mosfet-switch-with-isolated-gate-driver-and-isolated-dc-dc-converter-1ed3124mc12h","title":"High Voltage SiC-MOSFET Switch with Isolated Gate Driver and Isolated DC-DC Converter, 1ED3124MC12H","description":"\u003cp\u003eThe isolated high-voltage SiC MOSFET switch offers a straightforward solution for power drivers, comprising a gate driver chip (1ED3124MC12H), a 1.2kV\/4.7A SiC MOSFET, and an isolated 2W DC-DC converter (R12P22005D). The gate driver chip is optimized for high-frequency operations and can deliver high gate driver currents of up to\u003cspan\u003e \u003c\/span\u003e\u003cstrong\u003e14A.\u003c\/strong\u003e\u003cspan\u003e \u003c\/span\u003eThis module is well-suited for various applications, including half-bridge, full-bridge, and single SiC MOSFET switch configurations.\u003c\/p\u003e\n\u003cp\u003eFor convenient access, the Source and Drain of the SiC MOSFET are connected to high-current\/voltage screw terminals. Additionally, an optional high-voltage C12 capacitor can be installed as per the specific application requirements, providing flexibility and adaptability to different use cases. Overall, this isolated high-voltage SiC MOSFET switch module provides a reliable and efficient solution for power driver applications.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eLogic input:\u003c\/strong\u003e\u003cspan\u003e \u003c\/span\u003eto output switching behavior There are two possible input modes to control the SiC MOSFET. At non-inverting mode IN+ controls the driver output while IN- is set to low. At inverting mode IN- controls the driver output while IN+ is set to high. A minimum input pulse width is defined to filter occasional glitches.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eDriver outputs:\u003c\/strong\u003e\u003cspan\u003e \u003c\/span\u003eThe output driver section uses MOSFETs to provide a rail-to-rail output. This feature permits that tight control of gate voltage during on-state and short circuit can be maintained as long as the driver’s supply is stable. Due to the low internal voltage drop, switching behavior of the SiC MOSFET is predominantly governed by the gate resistor. Furthermore, it reduces the power to be dissipated by the driver.\u003c\/p\u003e\n\u003ch3\u003eFeatures\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eInput Supply 12V DC\u003c\/li\u003e\n\u003cli\u003eDC-DC Converter Output +20V DC\/ -5V DC\u003c\/li\u003e\n\u003cli\u003eHeader Connector for Input Power and Signal Input\u003c\/li\u003e\n\u003cli\u003eOn Board High Voltage TO263-7 SIC MOSFET (IMBG120R350M1H 1200V\/4.7A \/350mΩ\/175°C)\u003c\/li\u003e\n\u003cli\u003eUp to 14.0 A typical peak output current (Gate Driver)\u003c\/li\u003e\n\u003cli\u003eDC-DC Converter Isolation 6.4VKVDC\u003c\/li\u003e\n\u003cli\u003eGate Driver Chip Isolation 5.7 kV (rms)\u003c\/li\u003e\n\u003cli\u003e3 V and 5 V input supply voltage\u003c\/li\u003e\n\u003cli\u003eHigh common-mode transient immunity CMTI \u0026gt; 200 kV\/µs\u003c\/li\u003e\n\u003cli\u003eScrew Terminal Provided for SiC MOSFET Drain Source Connections\u003c\/li\u003e\n\u003cli\u003eOn Board Power LED (Output DC-DC Converter)\u003c\/li\u003e\n\u003cli\u003ePCB Dimensions 64.93 x 27.31 mm\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003e \u003c\/p\u003e","brand":"dotfry","offers":[{"title":"Default Title","offer_id":46899963166892,"sku":"G105","price":42.0,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0757\/6436\/7532\/files\/G105A.jpg?v=1786181728","url":"https:\/\/dotfry.com\/products\/high-voltage-sic-mosfet-switch-with-isolated-gate-driver-and-isolated-dc-dc-converter-1ed3124mc12h","provider":"dotfry","version":"1.0","type":"link"}