High Voltage SiC-MOSFET Switch with Isolated Gate Driver and Isolated DC-DC Converter, 1ED3124MC12H
The isolated high-voltage SiC MOSFET switch offers a straightforward solution for power drivers, comprising a gate driver chip (1ED3124MC12H), a 1.2kV/4.7A SiC MOSFET, and an isolated 2W DC-DC converter (R12P22005D). The gate driver chip is optimized for high-frequency operations and can deliver high gate driver currents of up to 14A. This module is well-suited for various applications, including half-bridge, full-bridge, and single SiC MOSFET switch configurations.
For convenient access, the Source and Drain of the SiC MOSFET are connected to high-current/voltage screw terminals. Additionally, an optional high-voltage C12 capacitor can be installed as per the specific application requirements, providing flexibility and adaptability to different use cases. Overall, this isolated high-voltage SiC MOSFET switch module provides a reliable and efficient solution for power driver applications.
Logic input: to output switching behavior There are two possible input modes to control the SiC MOSFET. At non-inverting mode IN+ controls the driver output while IN- is set to low. At inverting mode IN- controls the driver output while IN+ is set to high. A minimum input pulse width is defined to filter occasional glitches.
Driver outputs: The output driver section uses MOSFETs to provide a rail-to-rail output. This feature permits that tight control of gate voltage during on-state and short circuit can be maintained as long as the driver’s supply is stable. Due to the low internal voltage drop, switching behavior of the SiC MOSFET is predominantly governed by the gate resistor. Furthermore, it reduces the power to be dissipated by the driver.
Features
- Input Supply 12V DC
- DC-DC Converter Output +20V DC/ -5V DC
- Header Connector for Input Power and Signal Input
- On Board High Voltage TO263-7 SIC MOSFET (IMBG120R350M1H 1200V/4.7A /350mΩ/175°C)
- Up to 14.0 A typical peak output current (Gate Driver)
- DC-DC Converter Isolation 6.4VKVDC
- Gate Driver Chip Isolation 5.7 kV (rms)
- 3 V and 5 V input supply voltage
- High common-mode transient immunity CMTI > 200 kV/µs
- Screw Terminal Provided for SiC MOSFET Drain Source Connections
- On Board Power LED (Output DC-DC Converter)
- PCB Dimensions 64.93 x 27.31 mm
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The isolated high-voltage SiC MOSFET switch offers a straightforward solution for power drivers, comprising a gate driver chip (1ED3124MC12H), a 1.2kV/4.7A SiC MOSFET, and an isolated 2W DC-DC converter (R12P22005D). The gate driver chip is optimized for high-frequency operations and can deliver high gate driver currents of up to 14A. This module is well-suited for various applications, including half-bridge, full-bridge, and single SiC MOSFET switch configurations.
For convenient access, the Source and Drain of the SiC MOSFET are connected to high-current/voltage screw terminals. Additionally, an optional high-voltage C12 capacitor can be installed as per the specific application requirements, providing flexibility and adaptability to different use cases. Overall, this isolated high-voltage SiC MOSFET switch module provides a reliable and efficient solution for power driver applications.
Logic input: to output switching behavior There are two possible input modes to control the SiC MOSFET. At non-inverting mode IN+ controls the driver output while IN- is set to low. At inverting mode IN- controls the driver output while IN+ is set to high. A minimum input pulse width is defined to filter occasional glitches.
Driver outputs: The output driver section uses MOSFETs to provide a rail-to-rail output. This feature permits that tight control of gate voltage during on-state and short circuit can be maintained as long as the driver’s supply is stable. Due to the low internal voltage drop, switching behavior of the SiC MOSFET is predominantly governed by the gate resistor. Furthermore, it reduces the power to be dissipated by the driver.
Features
- Input Supply 12V DC
- DC-DC Converter Output +20V DC/ -5V DC
- Header Connector for Input Power and Signal Input
- On Board High Voltage TO263-7 SIC MOSFET (IMBG120R350M1H 1200V/4.7A /350mΩ/175°C)
- Up to 14.0 A typical peak output current (Gate Driver)
- DC-DC Converter Isolation 6.4VKVDC
- Gate Driver Chip Isolation 5.7 kV (rms)
- 3 V and 5 V input supply voltage
- High common-mode transient immunity CMTI > 200 kV/µs
- Screw Terminal Provided for SiC MOSFET Drain Source Connections
- On Board Power LED (Output DC-DC Converter)
- PCB Dimensions 64.93 x 27.31 mm
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